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Strain engineering in nanoscale CMOS FinFETs and methods to optimize RS/D

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10 Author(s)

For the first time, we demonstrate stressor contact etch stop liner (sCESL) modulation of parasitics/external resistance in nonplanar devices. We report 17% saturation drive current enhancement in underlap doped cMOS FinFETs attributed to simultaneous lowering of RS/D via biaxial S/D stress and μo increase via effective uniaxial channel stress. Our observations imply that biaxial strain engineering for reduction of RS/D offers a significant opportunity to realize non-planar CMOSFET performance metrics for the 22nm node and beyond.

Published in:

VLSI Technology Systems and Applications (VLSI-TSA), 2010 International Symposium on

Date of Conference:

26-28 April 2010