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Graphene is considered to be promising candidate for future transistor and interconnects material in integrated circuits because of its high intrinsic mobility and current-carrying capacity outperforming Cu. Particularly, bilayer graphene (BLG) systems offer controllable and wide band gap tunability without the need for nontrivial atomically precise nanoribbon patterning, which is indispensable to band gap engineering of monolayer graphene. Hence, novel devices consisting of BLG as both transistors and interconnects in combination with well-established Cu interconnects is conceivable. In this frame, this study has aimed to address reliability limiting factors of BLG/Cu contacts and current-carrying capacity.