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Hot carrier degradation is critical for LDMOS transistors especially in applications where inductive loads are repetitively switched. In this work, a model for predicting the hot carrier degradation of an LDMOS in dynamic operation conditions is developed and verified for a device driving an inductive load in repetitive clamping mode. Device simulations are performed using the hydrodynamic model. Based on these simulations the physical mechanism of hot carrier degradation is investigated. The results are verified experimentally by photon-emission microscopy. Monte-Carlo simulation delivers profound insight into the spatial and energy distribution of the carriers impinging on the Si/SiO2-interface.