Referenced Items are not available for this document.
We investigate atmospheric neutron effects on floating gate cells in MLC NAND Flash memories. Loss of information is shown to occur especially at the highest program levels, but to an extent that does not challenge current error correction capabilities. We discuss the physical mechanisms and analyze scaling trends, which show a rapid increase in sensitivity for decreasing feature size. A large spread in the cross section is visible from vendor to vendor for comparable feature size.
Published in:
Reliability Physics Symposium (IRPS), 2010 IEEE International
Date of Conference: 2-6 May 2010
- Page(s):
- 400 - 406
- ISSN :
- 1541-7026
- Print ISBN:
- 978-1-4244-5430-3
- INSPEC Accession Number:
- 11501040
- Conference Location :
- Anaheim, CA
- Digital Object Identifier :
- 10.1109/IRPS.2010.5488797
- Product Type:
- Conference Publications
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