By Topic

Scaling trends of neutron effects in MLC NAND Flash memories

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
Gerardin, S. ; Dept. of Inf. Eng., Univ. of Padova, Padova, Italy ; Bagatin, M. ; Paccagnella, A. ; Cellere, G.
more authors

We investigate atmospheric neutron effects on floating gate cells in MLC NAND Flash memories. Loss of information is shown to occur especially at the highest program levels, but to an extent that does not challenge current error correction capabilities. We discuss the physical mechanisms and analyze scaling trends, which show a rapid increase in sensitivity for decreasing feature size. A large spread in the cross section is visible from vendor to vendor for comparable feature size.

Published in:

Reliability Physics Symposium (IRPS), 2010 IEEE International

Date of Conference:

2-6 May 2010