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Reliability assessment of state-of-the-art GaN HEMT by means of cellular Monte Carlo Simulation

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4 Author(s)
Marino, F.A. ; Arizona State Univ., Tempe, AZ, USA ; Guerra, D. ; Goodnick, S.M. ; Saraniti, M.

Here we discuss how Monte Carlo Simulations can be exploited to investigate reliability issues in GaN high electron mobility transistor (HEMT) devices. In particular, we report simulation results for high-frequency, high-power state-of-the-art GaN HEMTs focusing our analysis on the effects of that threading edge dislocations on the DC and RF performance of state of the art technologies. A complete characterization of an InGaN back - barrier device has been performed, and the influence of dislocation density on device performance analyzed. Furthermore, a device structure based on the N-face configuration is analyzed.

Published in:

Reliability Physics Symposium (IRPS), 2010 IEEE International

Date of Conference:

2-6 May 2010

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