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Temperature assessment of AlGaN/GaN HEMTs: A comparative study by Raman, electrical and IR thermography

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5 Author(s)
N. Killat ; University of Bristol, H.H. Wills Physics Laboratory, BS8 1TL, United Kingdom ; M. Kuball ; T. -M. Chou ; U. Chowdhury
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The accuracy of different thermography techniques for the determination of AlGaN/GaN HEMT channel temperature was investigated. Micro-Raman thermography, a novel electrical testing method, and IR thermography were applied to measure the temperature in the active region of AlGaN/GaN HEMTs with different device geometries. Due to its accepted accuracy, micro-Raman thermography was performed on different devices in order to validate thermal simulation results. When compared to the validated thermal model, pulsed I-V measurements underestimated channel temperature to some degree, while IR thermography determined unrealistically low device temperatures.

Published in:

Reliability Physics Symposium (IRPS), 2010 IEEE International

Date of Conference:

2-6 May 2010