Cart (Loading....) | Create Account
Close category search window
 

A built-in aging detection and compensation technique for improving reliability of nanoscale CMOS designs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Dadgour, H.F. ; Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA ; Banerjee, K.

The time-dependent degradation (aging) of device characteristics caused by Bias Temperature Instability (BTI) and Hot-Carrier Injection (HCI) are one of the major threats to the reliability of nanoscale digital CMOS designs. To address this challenge, a novel built-in aging “detection” and “compensation” technique is proposed. Performance degradation is detected using a novel area- and power-efficient sensor. Then, to improve the reliability, an adaptive Time-Borrowing (TB)-based compensation technique is employed, which decreases the timing failure probabilities in spite of aged transistors. It is shown via simulations that by employing these techniques, the reliability of circuits can be improved by approximately 10X.

Published in:

Reliability Physics Symposium (IRPS), 2010 IEEE International

Date of Conference:

2-6 May 2010

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.