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Disconnection of NiSi shared contact and its correction using NH3 soak treatment in Ti/TiN barrier metallization

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6 Author(s)
Takuya Futase ; Wafer Process Manufacturing Technology Dept. 2, Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japan ; Kota Funayama ; Naoto Hashikawa ; Hiroshi Tobimatsu
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During Ti/TiN barrier metallization of a shared contact in SRAM, an NH3 soak treatment selectively deoxidized silicon oxide on NiSi at the gate shoulder, improving the resistance of the contact. This deoxidizing NH3 soak treatment drastically reduced the drawbacks of conventional NH3 plasma treatment: plasma-induced damage of gate oxide and excessive nitridation of Ti/TiN. Although NH3 gas does not kinetically deoxidize silicon oxide, it does selectively deoxidize silicon oxide on the NiSi. We think that this is because the NiSi surface promotes the deoxidization of silicon oxide by NH3.

Published in:

Reliability Physics Symposium (IRPS), 2010 IEEE International

Date of Conference:

2-6 May 2010