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Effects of multi-node charge collection in flip-flop designs at advanced technology nodes

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10 Author(s)
Sheshadri, V.B. ; Dept. of Electr. Eng., Vanderbilt Univ., Nashville, TN, USA ; Bhuva, B.L. ; Reed, R.A. ; Weller, R.A.
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Circuit-level simulations predict increased vulnerability of flip-flop designs and increased occurrence of single-event upsets in advanced technologies due to multi-node charge collection from single-ion strikes. This trend is examined by simulating 3D models of the flip-flops in a terrestrial neutron environment with Monte-Carlo simulations of charge generation in several technology generations.

Published in:

Reliability Physics Symposium (IRPS), 2010 IEEE International

Date of Conference:

2-6 May 2010

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