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The challenges and limitations on triple level cell geometry and process beyond 20 nm NAND Flash technology

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10 Author(s)
Yunbong Lee ; Flash Memory Div., Hynix Semicond. Inc., Cheongju, South Korea ; Byoungjun Park ; DaeHwan Yun ; YeonJoo Jeong
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This paper investigates the challenges and difficulties of TLC cell geometry and process beyond 20nm NAND technology from the viewpoint of programmed Vth level, new HCI disturbance and charge loss in the highest programmed level.

Published in:

Memory Workshop (IMW), 2010 IEEE International

Date of Conference:

16-19 May 2010

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