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A CuxO-based resistive memory with low power and high reliability for SOC nonvolatile memory applications

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12 Author(s)
Wang, M. ; ASIC & Syst. State Key Lab., Fudan Univ., Shanghai, China ; Song, Y.L. ; Wan, H.J. ; Lv, H.B.
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A CuxO-based resistive memory is successfully integrated in 0.13 μm logic process. Operation algorithm is optimized to achieve low power consumption with reset current down to 30 μA. High thermal stability and small cell size less than 22 F2 have been demonstrated. The advantages make this device promising for system on chip non-volatile memory applications.

Published in:

Memory Workshop (IMW), 2010 IEEE International

Date of Conference:

16-19 May 2010