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Investigation of deep levels in AlGaN/GaN HEMTs on silicon substrate by conductance deep level transient spectroscopy

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6 Author(s)
H. Mosbahi ; Laboratoire de micro-optoélectroniques et nanostructures, Département de Physique, Faculté des sciences de Monastir, 5019, Tunisia ; M. Gassoumi ; M. Charfeddine ; C. Gaquiere
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We report investigation of electron traps in AlGaN/GaN HEMTs, grown on silicon by molecular beam epitaxy. Deep levels analysis was performed by conductance deep level transient spectroscopy (CDLTS) under a drain pulse. CDLTS measurements reveal three traps with the energy levels of 0.11, 0.17 and 0.22 eV.

Published in:

Design and Technology of Integrated Systems in Nanoscale Era (DTIS), 2010 5th International Conference on

Date of Conference:

23-25 March 2010