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Fullerene-Based Hybrid Devices for High-Density Nonvolatile Memory

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7 Author(s)
Ferdousi, F. ; Microelectron. Res. Center, Univ. of Texas at Austin, Austin, TX, USA ; Jamil, M. ; Liu, H. ; Kaur, S.
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We demonstrate a CMOS-compatible, nonvolatile, hybrid-memory device using fullerenes as a floating gate. In the hybrid MOS capacitors, organic fullerene molecules were encapsulated between inorganic oxides, i.e., SiO2 as a tunnel oxide and HfO2 as a control oxide. Aluminum was e-beam deposited on the fullerenes and spontaneously oxidized to act as a nucleation layer for the HfO2 control oxide. Material characterization confirmed the presence of fullerenes and high-k dielectric in the gate stack. Electrical characterization verified the memory operation of the devices. Finally, the molecular orbital energies of the fullerene molecules in the gate stack were estimated.

Published in:

Nanotechnology, IEEE Transactions on  (Volume:10 ,  Issue: 3 )

Date of Publication:

May 2011

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