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Surround-gated vertical nanowire quantum dots

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7 Author(s)
van Weert, M.H.M. ; Kavli Institute of Nanoscience, Delft University of Technology, Delft, Zuid Holland 2628CJ, The Netherlands ; den Heijer, M. ; van Kouwen, M.P. ; Algra, R.E.
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We report voltage dependent photoluminescence experiments on single indium arsenide phosphide (InAsP) quantum dots embedded in vertical surround-gated indium phosphide (InP) nanowires. We show that by tuning the gate voltage, we can access different quantum dot charge states. We study the anisotropic exchange splitting by polarization analysis, and identify the neutral and singly charged exciton. These results are important for spin addressability in a charge tunable nanowire quantum dot.

Published in:

Applied Physics Letters  (Volume:96 ,  Issue: 23 )

Date of Publication:

Jun 2010

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