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Effect of humidity on hydrogen sensitivity of Pt-gated AlGaN/GaN high electron mobility transistor based sensors

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7 Author(s)
Lo, C.F. ; Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611, USA ; Chang, C.Y. ; Chu, B.H. ; Pearton, S.J.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3454279 

The effects of relative humidity on sensing characteristics of Pt-gated AlGaN/GaN high electron mobility transistor diode based hydrogen sensors were investigated. The absorbed water and oxygen molecules blocked available Pt surface adsorption sites for H2 absorption and reduced the hydrogen sensing sensitivity compared to low humidity conditions. The hydrogen sensing sensitivity decreased proportional to the relative humidity. However, the presence of humidity improved the sensor recovery characteristics after exposure to the hydrogen ambient.

Published in:

Applied Physics Letters  (Volume:96 ,  Issue: 23 )

Date of Publication:

Jun 2010

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