By Topic

Proposal for an Inversionless Tunable Far-Infrared and THz Room-Temperature Laser on a Quantum Well Semiconductor Nanostructure

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Kukushkin, V. ; Inst. of Appl. Phys., Russian Acad. of Sci., Nizhny Novgorod, Russia

On the basis of density matrix formalism a mathematical model describing lasing in quantum well semiconductor nanostructures is developed. In its frame, an inversionless room-temperature operating amplifier or laser widely tunable in the far-infrared and terahertz (THz) region is suggested. Its working frequency can be varied by several times via the simple change of the mid-infrared pump power. For the pump beam intensity I = 2.9 × 107 W/cm2 the output frequency of such a device is expected to be ≃1.27 THz and the corresponding gain ≃0.73 cm-1. For I = 8.6 × 107 W/cm2 its working frequency is 1.9 times higher and the gain reaches 10.95 cm-1. The suggested amplifier or laser is expected to operate in the pulsed mode and to be used as a compact and convenient tunable source of the far-infrared and THz radiation for fundamental studies and various applications.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:46 ,  Issue: 5 )