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Radiation Hardness of {\rm TiO}_{2} Memristive Junctions

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10 Author(s)
William M. Tong ; Information & Quantum Systems Lab, TransEL Corporation, Hewlett-Packard Laboratories, Albuquerque, Palo Alto, NM, USANM, USA ; J. Joshua Yang ; Philip J. Kuekes ; Duncan R. Stewart
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Semiconducting TiO2 displays non-volatile multi-state, hysteretic behavior in its I-V characteristics that can be exploited as a memory material in a memristive device. We exposed memristive TiO2 devices in the on and off resistance states to 45 Mrad(Si) of ~1-MeV gamma radiation and 23 Mrad(Si) of 941-MeV Bi-ions under zero bias conditions and none of the devices were degraded. These results suggest that TiO2 memristive devices are good candidates for radiation hard electronics for aerospace.

Published in:

IEEE Transactions on Nuclear Science  (Volume:57 ,  Issue: 3 )