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Chromatic dispersion for typical InGaAsP buried semiconductor optical amplifiers waveguide structures is investigated. Opposite to earlier estimations of the chromatic dispersion, we calculate a value of 30 fs/mm/nm around the band gap wavelength of 1550 nm. Moreover, the dependence of the chromatic dispersion on the carrier density and the lattice temperature is estimated. Since the mode confinement affects the composite material dispersion, the chromatic dispersion also depends on the polarization of the mode.