Cart (Loading....) | Create Account
Close category search window
 

Effects of Thermal Annealing on the Dynamic Characteristics of InAs/GaAs Quantum Dot Lasers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
7 Author(s)
Zhao, H.H. ; Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore ; Yoon, S.F. ; Ngo, C.Y. ; Wang, R.R.
more authors

We investigated the effects of rapid thermal annealing (RTA) on the dynamic characteristics of the InAs/GaAs ten-layer quantum dot (QD) laser. Improvements in the temperature stability of bandwidth have been demonstrated upon annealing. We attribute the improvements to the following factors: 1) increase in internal quantum efficiency and 2) reduction in temperature dependency of differential gain. The increase in bandwidth at high temperature from the annealed QDs could be due to a reduction in the relaxation time on the order of 0.1 ps. More importantly, the RTA process resulted in better temperature stability in the differential gain and gain compression. This is beneficial for the development of uncooled high-speed QD lasers.

Published in:

Photonics Journal, IEEE  (Volume:2 ,  Issue: 4 )

Date of Publication:

Aug. 2010

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.