By Topic

Fundamental Limitations to the Width of the Programmed V_{T} Distribution of nor Flash Memories

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Christian Monzio Compagnoni ; Dipartimento di Elettronica e Informazione, Italian University Nanoelectronics Team (IU.NET), Politecnico di Milano, Milano, Italy ; Luca Chiavarone ; Marcello Calabrese ; Michele Ghidotti
more authors

This paper presents experimental evidences of the granular electron injection during channel hot-electron programming of NOR Flash memories. The statistical process ruling the discrete charge transfer from the substrate to the floating gate is shown to introduce a fundamental spread contribution to the programmed threshold-voltage distribution obtained by the staircase algorithm, determining its ultimate accuracy. However, the actual precision in the control of cell threshold-voltage during programming is shown to be quite far from this fundamental limitation due to random telegraph noise effects. Moreover, the scaling trend of the electron injection statistics and the random telegraph noise limitation to the accuracy of the programming algorithm shows that the latter will continue to represent the most severe constraint for the next nor technology nodes.

Published in:

IEEE Transactions on Electron Devices  (Volume:57 ,  Issue: 8 )