By Topic

Transient Device Simulation of Floating Gate Nonvolatile Memory Cell With a Local Trap

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Watanabe, H. ; Adv. LSI Technol. Lab., Toshiba Corp., Yokohama, Japan

The single-electron general-purpose device simulator is improved to carry out a wide-range transient analysis from 1 ps to 10 years. We apply this simulator to a floating gate (FG) nonvolatile memory cell in order to simulate a degradation mode of data retention owing to the direct tunneling enhanced by the fixed charge stored by a local trap in an interpoly dielectric. The scaling impact of ideal high-K interpoly dielectric FG nonvolatile memory cell is also investigated.

Published in:

Electron Devices, IEEE Transactions on  (Volume:57 ,  Issue: 8 )