Referenced Items are not available for this document.
A physics-based analytical model for the surface potential in n-channel MOSFETs considering quantum-mechanical effects in the inversion region is presented. The model is continuous from the accumulation to strong inversion regions of operation. The results from the model show excellent agreement with the values obtained from a self-consistent solution of the Schrödinger and Poisson equations. The transconductance and current-voltage characteristics of MOSFETs obtained using the surface-potential values calculated from our model also agree very well with those obtained from numerical methods and reported data.
Published in:
Electron Devices, IEEE Transactions on
(Volume:57
,
Issue:
8
)
Date of Publication: Aug. 2010
- Page(s):
- 1820 - 1828
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 11433093
- Digital Object Identifier :
- 10.1109/TED.2010.2050959
- Product Type:
- Journals & Magazines
- Date of Publication :
- 14 June 2010
- Date of Current Version :
- 23 July 2010
- Issue Date :
- Aug. 2010
- Sponsored by :
- IEEE Electron Devices Society
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