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Impact of interface controlling layer of Al2O3 for improving the retention behaviors of In–Ga–Zn oxide-based ferroelectric memory transistor

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9 Author(s)
Sung-Min Yoon ; Convergence Components & Material Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), 138 Gajeong-no, Yuseong-gu, Daejeon 305-700, Republic of Korea ; Yang, Shin-Hyuk ; Soon-Won Jung ; Chun-Won Byun
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We characterized the nonvolatile memory thin-film transistors, which was composed of an amorphous indium-gallium-zinc oxide -IGZO) active channel and a ferroelectric poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] gate insulator, and investigated the impact of an interface controlling layer. Excellent device performances, such as the field-effect mobility of 60.9 cm2V-1s-1, the subthreshold swing of 120 mV/dec, and the memory window of 6.4 V at ±12 V programming, were confirmed for the device without any interface layer. However, the memory retention time was very short. The retention behaviors could be dramatically improved when 4 nm thick Al2O3 layer was introduced between the P(VDF-TrFE) and α-IGZO.

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Applied Physics Letters  (Volume:96 ,  Issue: 23 )