IEEE.org| IEEE Xplore Digital Library| IEEE Standards| IEEE Spectrum| More Sites

Cart (Loading....) | Create Account | 

Close category search window
Author Searchbeta |  Advanced Search  |  Preferences |  Search Tips  |  More Search Options  
 
Browse Journals & Magazines > Applied Physics Letters ...> Volume:96 Issue:23 Help

Thermal conductivities of Si1-xGex nanowires with different germanium concentrations and diameters

Full Text Sign-In or Purchase

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing! close button
puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Kim, Hyoungjoon ; School of Mechanical Engineering, Yonsei University, 262 Seongsanno, Seoul 120-749, Republic of Korea ; Kim, Ilsoo ; Heon-Jin Choi ; Kim, Woochul

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3443707 

The thermal conductivities of Si1-xGex nanowires (NWs) synthesized with Ge concentrations of 0.0%, 0.4%, 4%, and 9% and different diameters were measured from 40 to 420 K. The thermal conductivity of Si1-xGex NWs decreases as the Ge concentration increases due to alloy scattering. As the diameter of the Si1-xGex NWs decreases, the thermal conductivity decreases due to phonon boundary scattering. However, the thermal conductivity dependency on the diameter of the NWs is not significant. This indicates that alloy scattering should be the dominant scattering mechanism in Si1-xGex NWs. This study should provide a basis for designing efficient thermoelectric devices out of Si1-xGex NWs and Si1-xGex nanocomposites.

Published in:
Applied Physics Letters  (Volume:96 ,  Issue: 23 )

Date of Publication: Jun 2010

Page(s):
233106 - 233106-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.3443707
Product Type:
Journals & Magazines
Date of Current Version :
10 June 2010
Issue Date :
Jun 2010

IEEE Account

Purchase Details

Profile Information

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.