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Performance improvement of longwave infrared photodetector based on type-II InAs/GaSb superlattices using unipolar current blocking layers

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6 Author(s)
Gautam, N. ; Department of Electrical and Computer Engineering, Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87106, USA ; Kim, H.S. ; Kutty, M.N. ; Plis, E.
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We report here a heterojunction band gap engineered type-II InAs/GaSb strained layer superlattice photodiode for longwave infrared detection. The reported PbIbN architecture shows improved performance over conventional PIN design due to unipolar current blocking layers. At 77 K and Vb=-0.25 V, responsivity of 1.8 A/W, dark current density of 1.2 mA/cm2, single pass quantum efficiency of 23%, and shot noise limited detectivity (D*) of 8.7×1010 cmHz1/2W-1 c=10.8 μm) were measured. The device demonstrated background limited performance at 100 K under 300 K for field of view.

Published in:

Applied Physics Letters  (Volume:96 ,  Issue: 23 )