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A V-Band CMOS Direct Injection-Locked Frequency Divider Using Forward Body Bias Technology

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4 Author(s)
Chen, Y.-T. ; Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan ; Li, M.-W. ; Huang, T.-H. ; Huey-Ru Chuang

This letter presents a V-band direct injection-locked frequency divider (ILFD) using forward body bias technology. The divider is implemented in a 0.13 μm CMOS process. The measurements show that the free-running frequency of the divider is 28.67 GHz, the total locking range is 16.2% at 58 GHz with 3.93 mW from a low supply voltage of 0.7 V, and the measured phase noise of the divider is -123.5 dBc/Hz at 500 KHz offset. The output power of the divider is higher than -9 dBm from 54 to 61 GHz, and a good figure of merit is achieved.

Published in:

Microwave and Wireless Components Letters, IEEE  (Volume:20 ,  Issue: 7 )

Date of Publication:

July 2010

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