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A Fully Integrated CMOS Accelerometer Using Bondwire Inertial Sensing

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3 Author(s)
Yu-Te Liao ; Dept. of Electr. Eng., Univ. of Washington, Seattle, WA, USA ; Biederman, W.J. ; Otis, B.P.

This paper presents the design, implementation, and characterization of a fully integrated accelerometer using a bondwire inertial sensor. The accelerometer was implemented in a standard CMOS process without microelectromechanical processing. The system consists of a gold and aluminum bondwire inertial sensor and readout circuitry. Finite-element analysis was used to characterize the mechanical performance of the accelerometer and reinforce empirical data. The system includes a fully differential frequency modulation downconversion architecture and consumes 13.5 mW while achieving a gain of 10 kHz/g, a bandwidth of 700 Hz, and a resolution of 80 mg. The chip was fabricated in an 0.13-m CMOS process with an area of 1.1 mm.

Published in:

Sensors Journal, IEEE  (Volume:11 ,  Issue: 1 )