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A nonvolatile crossbar switch using a dual-layered TiOx/TaSiOy solid electrolyte, "NanoBridge," has been developed. NanoBridge is scalable to 50 nm and programmed at low voltage while keeping a low ON-resistance. The high compatibility with a back-end-of-line processing for CMOS integrated circuits is achieved by using the dual-layered TiOx/TaSiOy solid electrolyte, in which a barrier (Ti) is inserted on Cu and changes to an oxide during the subsequent process step. TiOx has the double role of preventing Cu oxidation during TaSiOy deposition and acting as a solid electrolyte itself. A resistive-change characteristic is investigated in terms of the inserted barrier dependence. At an optimal barrier insertion, the integrated switch shows bipolar switching characteristics with a high OFF-/ON-resistance ratio of 106. The developed device is applied to a 4 × 4 crossbar switch integrated with the CMOS circuit. The crossbar switch is configured without select transistors and transfers signals properly.