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10-Gb/s Planar InGaAs P-I-N Photodetectors

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7 Author(s)
Y. S. Wang ; Institute of Microelectronics & Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advance Optoelectronic Technology Center, National Cheng Kung University, Tainan, TAIWAN ; Shoou-Jinn Chang ; C. L. Tsai ; Meng-Chyi Wu
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The authors report the fabrication of high-performance planar InGaAs P-I-N buried heterostructure photodetectors (BH-PDs) by introducing mesa etching and refilling with semi-insulating InP. It was found that measured 3-dB bandwidth for the fabricated BH-PD was 12.4 GHz. For a given bandwidth of 1 kHz and a given bias of -5 V, it was found that noise equivalent powers our InGaAs P-I-N BH-PD were 6.05 × 10-14 W at 1310 nm and 4.36 × 10-14 W at 1550 nm, which correspond to normalize detectivity (D*) values of 2.3 × 1012 cmHz0.5W-1 and 3.2 × 1012 cmHz0.5W-1, respectively. It was also found that eye diagram data measured from the proposed BH-PD met with the requirements of the OC-192 standard.

Published in:

IEEE Sensors Journal  (Volume:10 ,  Issue: 10 )