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Surface 210 nm light emission from an AlN p–n junction light-emitting diode enhanced by A-plane growth orientation

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2 Author(s)
Taniyasu, Yoshitaka ; NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi 243-0198, Japan ; Kasu, M.

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(1120) A-plane AlN p–n junction light-emitting diode (LED) with a wavelength of 210 nm is demonstrated. The electroluminescence from the A-plane LED is inherently polarized for the electric field parallel to the [0001] c-axis due to a negative crystal-field splitting energy. The polarization ratio (electric-field component ratio of parallel and perpendicular to c-axis) is as high as 0.9. The radiation pattern of the A-plane LED shows higher emission intensity along the surface normal, while that of a conventional (0001) C-plane LED shows lower emission intensity along the surface normal. The different radiation patterns can be explained by the polarization property.

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Applied Physics Letters  (Volume:96 ,  Issue: 22 )