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High-Speed 1.3- \mu\hbox {m} p-i-n GaNAsSb/GaAs Waveguide Photodetector

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10 Author(s)
Zegaoui, M. ; Inst. of Electron., Univ. des Sci. et Technol. de Lille, Villeneuve-d''Ascq, France ; Xu, Z. ; Saadsaoud, N. ; Tan, K.H.
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The authors report the demonstration of high-speed GaNAsSb/GaAs p-i -n waveguide photodetector grown by molecular beam epitaxy technique. A 0.4- m-thick GaNAsSb core layer with 3.3% of N and 8% of Sb for detection wavelength over 1.3 m is sandwiched by GaAs and AlGaAs cladding layers. The device exhibits a record value of cutoff frequency of 16.5 GHz.

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Electron Device Letters, IEEE  (Volume:31 ,  Issue: 7 )