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Broadly Tunable InGaAsP–InP Strained Multiquantum-Well External Cavity Diode Laser

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5 Author(s)
Ksenia A. Fedorova ; Photonics & Nanoscience Group, School of Engineering, Physics and Mathematics, University of Dundee, United Kingdom ; Maria Ana Cataluna ; Igor Kudryashov ; Victor Khalfin
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In this letter, we demonstrate a broadly tunable InGaAs-InP strained multiquantum-well external cavity diode laser, which operates in the spectral range of 1494-1667 nm. A maximum continuous-wave output power in excess of 81 mW and sidemode suppression ratio higher than 50 dB were achieved in the central part of the tuning range. Different pump current and temperature regimes are investigated.

Published in:

IEEE Photonics Technology Letters  (Volume:22 ,  Issue: 16 )