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Particular Failure Mechanism of GaN-Based Alternating Current Light-Emitting Diode Induced by GaO _{x} Oxidation

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3 Author(s)
Hsi-Hsuan Yen ; Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Hao-Chung Kuo ; Yeh, Wen-Yung

This investigation describes the unique failure mechanism of the Wheatstone bridge circuit-type alternating current light-emitting diode (WB AC-LED). The micro-LEDs in WB AC-LED rectifying branches were reverse biased, and therefore, positive charges (holes) accumulated in the n-type GaN layer under the active region and combined with the GaN material and OH- ions to generate GaOx oxidation grains. The GaOx generation speed was fast with high reverse voltage applied to micro-LEDs, and the expansion of GaOx dimensions degraded the opto-electrical characteristics and eventually caused failure of the WB AC-LED. The root-mean-square reverse voltage dropped across each micro-LED from -13.1 to -6.7 V with different micro-LEDs array arrangements extended the WB AC-LED lifetime from being less than 650 h to more than 1600 h, respectively.

Published in:

Photonics Technology Letters, IEEE  (Volume:22 ,  Issue: 15 )