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Improved Capacitance Density and Reliability of High-  \kappa \hbox {Ni}/\hbox {ZrO}_{2}/\hbox {TiN} MIM Capacitors Using Laser-Annealing Technique

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6 Author(s)
Tsai, C.Y. ; Electron. Eng. Dept., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Chiang, K.C. ; Lin, S.H. ; Hsu, K.C.
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We have fabricated high-κ Ni/ZrO2/TiN metal-insulator-metal capacitors with a very high 52-fF/μm2 capacitance density, a low leakage current of 1.6 × 10-7A/cm2, and good ten-year reliability with a small ΔC/C of 1.7% at 2 V. From X-ray diffraction measurements, laser annealing can improve the permittivity of ZrO2 due to tetragonal-phase formation which in turn helps enhance capacitance density and reliability. Such excellent device integrity is attributed to the combination of enhanced ZrO2 tetragonal phase by laser annealing, high work-function Ni electrode, and good bottom-interface treatment.

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Electron Device Letters, IEEE  (Volume:31 ,  Issue: 7 )