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GaN Schottky Barrier Photodetectors

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8 Author(s)
S. J. Chang ; Institute of Microelectronics & Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan, Taiwan ; S. M. Wang ; P. C. Chang ; C. H. Kuo
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We report the fabrication of GaN photodetectors (PDs) prepared on nanorod template. Using the nanorods template, it was found that we can effectively suppress leakage current, ultraviolet-to-visible rejection ratio and photoconductive gain of the PDs. With -2 V applied bias, it was found that noise equivalent power (NEP) and normalized detectivity (D*) were 7.00 × 10-10 W and 2.26 × 109 cmHz0.5 W-1, respectively, for the PD prepared on nanorods template. With the same -2 V bias, it was found that NEP and D* were 3.56 × 10-6 W and 4.44 × 105 cmHz0.5 W-1, respectively, for the PD prepared on a conventional sapphire substrate.

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IEEE Sensors Journal  (Volume:10 ,  Issue: 10 )