By Topic

A 2\times V_{\rm DD} -Enabled Mobile-TV RF Front-End With TV-GSM Interoperability in 1-V 90-nm CMOS

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Pui-In Mak ; Analog & Mixed-Signal VLSI Lab., Univ. of Macau, Macau, China ; Martins, R.P.

A 2 × VDD-enabled mobile-TV RF front-end with TV-GSM interoperability is described. It is an on/off-chip codesign employing externally three customized UHF/VHF preselect filters, an RF switch, and a balun. The integrated part includes: 1) a cascode-cascade inverter-based low-noise amplifier that features a high gain-to-power efficiency; 2) a linearized C-2C attenuator using reliably-overdriven MOS switches; 3) an inductive-peaking feedforward path that evens out the passband variation; and 4) two cascode I/Q mixer drivers capable to drive passive mixers with small gain and bandwidth reduction. Gate-drain-source engineering and self-biased structures are the keys enabling performance optimization with low power and no reliability risk. Fabricated in a 90-nm CMOS process with 1-V thin-oxide devices, the RF front-end measures 68-dB rejection at GSM-900 uplink, 0.7-dB passband roll-off, 3.9-dB noise figure, and -5.5-dBm third-order intercept point at a maximum voltage gain of 26.2 dB. The core occupies 0.28 mm2 and draws 15 mW. The achieved power-performance metrics compares favorably with the prior state of the art.

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:58 ,  Issue: 7 )