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Complementary UWB LNA Design Using Asymmetrical Inductive Source Degeneration

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3 Author(s)
Hui-I Wu ; Coll. of Electr. & Comput. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Hu, R. ; Jou, C.F.

This letter proposes a novel LNA design method where the complementary transistor topology is combined with asymmetrical inductive source degeneration to achieve matched input impedance over a wide bandwidth. A 2-10 GHz LNA is designed and fabricated using a commercial 0.18 RF-CMOS process to verify the feasibility of our proposed method. In the intended bandwidth, this LNA has matched input impedance, 20 dB power gain, and 2.4-3.4 dB noise figure, with 25.65 mW power consumption.

Published in:

Microwave and Wireless Components Letters, IEEE  (Volume:20 ,  Issue: 7 )