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Variation in RF Performance of MOSFETs Due to Substrate Digital Noise Coupling

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3 Author(s)
Yongho Oh ; School of Electrical Engineering, Korea University, Anam-dong, Seongbuk-gu, Seoul, Korea ; Sanggeun Jeon ; Jae-Sung Rieh

In this letter, the variation in the key RF performance parameters of MOSFETs in the presence of the substrate digital noise coupling is investigated. The parameters, including fT and fmax, showed substantial change up to ~20% with realistic level of noise injection. It is shown that such change in the RF performance with the noise injection is due to the threshold voltage ( VT) variation. The observed VT variation is attributed to the virtual body effect due to the substrate potential fluctuation by the coupled substrate digital noise.

Published in:

IEEE Microwave and Wireless Components Letters  (Volume:20 ,  Issue: 7 )