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Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer

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9 Author(s)
Choi, Suk ; Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, 777 Atlantic Dr. NW, Atlanta, Georgia 30332-0250, USA ; Kim, Hee Jin ; Kim, Seong-Soo ; Liu, Jianping
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InAlN electron-blocking layers (EBLs) are shown to improve the emission intensity and to mitigate the efficiency droop problem in III-nitride-based visible light-emitting diodes (LEDs). Using an In0.18Al0.82N EBL in blue LEDs, we have achieved a significant improvement in the electroluminescence emission intensity and a mitigated efficiency droop compared to similar LEDs without an EBL or with an Al0.2Ga0.8N EBL. This indicates that an In0.18Al0.82N EBL is more effective in electron confinement and reduces the efficiency droop possibly caused by carrier spill-over than conventional AlGaN EBLs.

Published in:

Applied Physics Letters  (Volume:96 ,  Issue: 22 )