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In this paper, a compact power amplifier module integrated in a thin film multi-chip module (MCM-D) interconnect technology is presented. The active device of the amplifier is a SiC based AlGaN/GaN high electron mobility transistor (HEMT). Measurement results show that the prototype module can exhibit an output power of 1.6 W and a drain efficiency of 28% at 5.5 GHz. The major advantage of using a system-in-package (SiP) approach with MCM-D technology is the dramatic cost reduction compared to an MMIC and the size reduction compared to a hybrid PCB approach.
Published in:
Integrated Nonlinear Microwave and Millimeter-Wave Circuits (INMMIC), 2010 Workshop on
Date of Conference: 26-27 April 2010
- Page(s):
- 37 - 40
- E-ISBN :
- 978-1-4244-7412-7
- Print ISBN:
- 978-1-4244-7410-3
- INSPEC Accession Number:
- 11362109
- Conference Location :
- Goteborg
- Digital Object Identifier :
- 10.1109/INMMIC.2010.5480146
- Product Type:
- Conference Publications
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