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In this paper we present the development of very simple, accurate and efficient methodology based on multilayer spreading approach [MSA] to model the distributed complex capacitance as well as inductance in metal-insulator-semiconductor (MIS) interconnects on lossy semiconductor substrate which is based on quasi-static approach and does not require exact field solutions. The model is quite accurate and may be used for CAD applications to study the propagation behavior of MIS interconnects used in RF MEMS and integrated circuits. The equivalent transmission line model matches well with full-wave analysis and experimental data.
Date of Conference: 12-16 April 2010