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High-Saturation-Power and High-Speed Ge-on-SOI p-i-n Photodetectors

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5 Author(s)
Hai-Yun Xue ; State Key Lab. on Integrated Optoelectron., Chinese Acad. of Sci., Beijing, China ; Chun-Lai Xue ; Bu-Wen Cheng ; Yu-De Yu
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Ge-on-silicon-on-insulator p-i-n photodetectors were fabricated using an ultralow-temperature Ge buffer by ultrahigh-vacuum chemical vapor deposition. For a detector of 70-m diameter, the 1-dB small-signal compression power was about 110.5 mW. The 3-dB bandwidth at 3-V reverse bias was 13.4 GHz.

Published in:

Electron Device Letters, IEEE  (Volume:31 ,  Issue: 7 )

Date of Publication:

July 2010

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