By Topic

Flexibly-Shaped-Pulse flash lamp annealing with assisted temperature control (FSP-FLAplus) to realize a wide range of annealing conditions

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Kato, S. ; Semicond. Leading Edge Technol. Inc. (Selete), Tsukuba, Japan ; Onizawa, T. ; Aoyama, T. ; Ikeda, K.
more authors

Millisecond annealing (MSA), such as flash lamp annealing (FLA) and laser spike annealing, is used for dopant activation of ultra-shallow junctions (USJ) in scaled complimentary metal-oxide-semiconductor (CMOS) devices. This is because lower sheet resistance (Rs) and less dopant diffusion are achieved with MSA and these are crucial requirements for minimizing the junction depth (Xj) in state-of-the-art CMOS. In this report, we examine, first, the effects of high assisted temperatures. Then, we demonstrate the excellent potential of combining FSP technology and lamp assisted heating on device performance.

Published in:

Junction Technology (IWJT), 2010 International Workshop on

Date of Conference:

10-11 May 2010