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Millisecond annealing (MSA), such as flash lamp annealing (FLA) and laser spike annealing, is used for dopant activation of ultra-shallow junctions (USJ) in scaled complimentary metal-oxide-semiconductor (CMOS) devices. This is because lower sheet resistance (Rs) and less dopant diffusion are achieved with MSA and these are crucial requirements for minimizing the junction depth (Xj) in state-of-the-art CMOS. In this report, we examine, first, the effects of high assisted temperatures. Then, we demonstrate the excellent potential of combining FSP technology and lamp assisted heating on device performance.