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Design of a Highly Efficient 2–4-GHz Octave Bandwidth GaN-HEMT Power Amplifier

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5 Author(s)
Saad, P. ; Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Göteborg, Sweden ; Fager, C. ; Haiying Cao ; Zirath, H.
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In this paper, the design, implementation, and experimental results of a high-efficiency wideband GaN-HEMT power amplifier are presented. A method based on source-pull/load-pull simulation has been used to find optimum source and load impedances across the bandwidth and then used with a systematic approach to design wideband matching networks. Large-signal measurement results show that, across 1.9-4.3 GHz, 9-11-dB power gain and 57%-72% drain efficiency are obtained while the corresponding power-added efficiency (PAE) is 50%-62%. Moreover, an output power higher than 10 W is maintained over the band. Linearized modulated measurements using a 20-MHz long-term evolution signal with 11.2-dB peak-to-average ratio show an average PAE of 27% and 25%, an adjacent channel leakage ratio of -44 and -42 dBc at 2.5 and 3.5 GHz, respectively.

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:58 ,  Issue: 7 )