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Sharp Reduction of Contact Resistivities by Effective Schottky Barrier Lowering With Silicides as Diffusion Sources

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26 Author(s)
Zhen Zhang ; IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA ; Pagette, F. ; D'Emic, C. ; Yang, B.
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An extremely low contact resistivity of 6-7 × 10-9 Ω·cm2 between Ni0.9Pt0.1Si and heavily doped Si is achieved through Schottky barrier engineering by dopant segregation. In this scheme, the implantation of B or As is performed into silicide followed by a low-temperature drive-in anneal. Reduction of effective Schottky barrier height is manifested in the elimination of nonlinearities in IV characteristics.

Published in:

Electron Device Letters, IEEE  (Volume:31 ,  Issue: 7 )