By Topic

Fully lithography independent fabrication of nanogap electrodes for lateral phase-change random access memory application

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
9 Author(s)
Jiayong Zhang ; Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People''s Republic of China ; Xiaofeng Wang ; Xiaodong Wang ; Huili Ma
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3431297 

A nanogap electrode fabrication method was developed and nanogap electrode as small as 17 nm was achieved based on sacrificial spacer process and conventional lithography. We have transferred this method to lateral phase-change random access memory (PCRAM) device fabrication. The electrical characterizations of 4.6 μm gap width using conventional lithography and 88 nm width based on this technology are shown. It is found that the threshold voltage and the dc power consumption are remarkably decreased due to nanogap electrode process. Our method cannot only improve the fabrication efficiency of PCRAM but also be easily transferred to other nanoelectronics applications.

Published in:

Applied Physics Letters  (Volume:96 ,  Issue: 21 )