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Probing stress effects in single crystal organic transistors by scanning Kelvin probe microscopy

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8 Author(s)
Teague, Lucile C. ; Savannah River National Laboratory, Aiken, South Carolina 29808, USA ; Jurchescu, Oana D. ; Richter, C.A. ; Subramanian, Sankar
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We report scanning Kelvin probe microscopy (SKPM) of single crystal difluoro bis(triethylsilylethynyl) anthradithiophene (diF-TESADT) organic transistors. SKPM provides a direct measurement of the intrinsic charge transport in the crystals independent of contact effects and reveals that degradation of device performance occurs over a time period of minutes as the diF-TESADT crystal becomes charged.

Published in:

Applied Physics Letters  (Volume:96 ,  Issue: 20 )

Date of Publication:

May 2010

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