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Effect of Ge Composition on Infrared Detecting Performance of Strain Si/ {\rm Si}_{1-{\rm x}-{\rm y}}{\rm Ge}_{\rm x} {\rm C} _{\rm y} Heterojunction on Preferentially Etched Silicon Substrate

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7 Author(s)
Yen-Ting Chiang ; Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan ; Yean-Kuen Fang ; Tse-Heng Chou ; Feng-Renn Juang
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The p-strain Si/i- heterojunctions prepared by a rapid thermal chemical vapor deposition system on an n-Si substrate with back preferentially etched were developed for fast IR detecting applications. The stress induced by the p-strain Si/i- heterojunction enhanced the carrier mobility in p-Si layer, while the preferentially etching of n-Si substrate accelerated the heat dissipating and the reduction of series resistance. As a result, the device achieved a better performance than that of the conventional one without the strain Si or the preferentially etched substrate. In addition, the effects of morphology and Ge composition in the i- thin film on the IR detecting performance were investigated in details.

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Sensors Journal, IEEE  (Volume:10 ,  Issue: 8 )