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We propose a novel 4-bit self-aligned SONOS-type nonvolatile memory (NVM) cell with a T-gate and I-shaped FinFET structure for practical implementation with high storage density and better reliability. In order to obtain enhanced reliability characteristics, a modified Fowler-Nordheim tunneling mechanism is employed for programming along the channel length direction, while a band-to-band hot hole injection is used for erasing along the channel width direction. With separated paths for program and erase, improved device performance is obtained with sensing margin. In order to improve the immunity to second-bit effects, the gate-induced drain leakage current method, which is a charge detection method and highly sensitive to the locally stored charges, is employed for the reading of the stored data. In terms of the scalability, we confirmed by 2-D technology computer-aided design simulation that the proposed NVM cell with channel length L = 50 nm operates with enough sensing margin and high-density ( ~ 5 F2/bit) NVM by the crossed cell array architecture.